DTC144TE / dtc144tua dtc144tca / dtc144tsa / dtc144tm npn digital transistors (built-in resistors) elektronische bauelemente 08-nov-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). the bias resistors consist of thin-film resistors w ith complete isolation to allow positive biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. only the on/off conditions need to be set for operation, making device design easy. equivalent circuit absolute maximum ratings (t a =25 c unless otherwise noted) parameter symbol limits (dtc144t ) unit m e ua ca sa collector-base voltage v (br)cbo 50 v collector-emitter voltage v (br)ceo 50 v emitter-base voltage v (br)ebo 5 ma collector current i c 100 collector dissipation p c 100 150 200 300 mw junction & storage temperature t j , t stg 150, -55~150 c DTC144TE (sot-523) addreviated symbol 06 dtc144tua (sot-323) addreviated symbol 06 dtc144tm (sot-723) addreviated symbol 06 dtc144tca (sot-23) addreviated symbol 06 dta143tsa (to-92s)
DTC144TE / dtc144tua dtc144tca / dtc144tsa / dtc144tm npn digital transistors (built-in resistors) elektronische bauelemente 08-nov-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 50 - - v i c =50 a, i e =0 collector-emitter breakdown voltage v (br)ceo 50 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =50 a, i c =0 collector cut-off current i cbo - - 0.5 a v cb =50v, i e =0 emitter cut-off current i ebo - - 0.5 a v eb =4v, i c =0 collector-emitter saturation voltage v ce(sat) - - 0.3 v i c =5ma, i b =0.5ma dc current transfer ratio h fe 100 300 600 v ce =5v, i c =1ma input resistance r 1 32.9 47 61.1 k transition frequency f t 250 - - mhz v o =10v, i e = -5ma, f=100mhz
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